transistor (npn) features z excellent h fe linearity z low noise . maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma i b base current -continuous 50 ma p c collector power dissipation 0.2 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =10 a,i c =0 5 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe(1) v ce =6v,i c =2ma 70 700 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.1 0.25 v transition frequency f t v ce =10v,i c =1ma 80 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 3.5 pf noise figure nf v ce =6v,i c =0.1ma, f=1khz,rg=10k ? 10 db classification of h fe rank o y g l range 70-140 120-240 200-400 300-700 sot-23 1. base 2. emitter 3. collector 2SC5343 1 www.htsemi.com semiconductor jinyu
2 www.htsemi.com semiconductor jinyu
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